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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5 ZVP2106C G D REFER TO ZVP2106A FOR GRAPHS S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -60 E-Line TO92 Compatible VALUE -280 -4 20 UNIT V mA A V mW C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 150 100 60 20 7 15 12 15 -1 5 -60 -1.5 -3.5 20 -0.5 -100 MAX. UNIT CONDITIONS. V V nA A A Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125C(2) VDS=-18 V, VGS=-10V VGS=-10V,ID=-500mA VDS=-18V,ID=-500mA A mS pF pF pF ns ns ns ns VDS=-18V, VGS=0V, f=1MHz VDD -18V, ID=-500mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-420 |
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